IRF7457 Ver la hoja de datos (PDF) - International Rectifier

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IRF7457

HEXFET® Power MOSFET

International Rectifier 

IRF7457

0.030

0.020

0.025

0.020

0.015

0.010

VGS = 4.5V

0.018

0.016

0.014

0.012

0.010

ID = 15A

0.005

VGS = 10V

0.008

0.000

0.006

0

20 40 60 80 100 120

3.0

3.5

4.0

4.5

5.0

5.5

ID , Drain Current ( A )

VGS, Gate -to -Source Voltage (V)

Fig 12. On-Resistance Vs. Drain Current

Current Regulator

Same Type as D.U.T.

50KΩ

12V

.2µF

.3µF

VGS

3mA

D.U.T.

+

-VDS

VGS

QGS

VG

IG

ID

Current Sampling Resistors

QG

QGD

Charge

Fig 13a&b. Basic Gate Charge Test Circuit

and Waveform

Fig 14. On-Resistance Vs. Gate Voltage

700

ID

TOP

5.4A

600

9.6A

BOTTOM 12A

500

400

300

V (B R )D SS

tp

IAS

VDS

L

RG

20V

tp

D.U .T

IA S

0.0 1Ω

15V

DRIVER

+

-

VD D

A

200

100

0

25

50

75

100

125

150

Starting TJ , Junction Temperature ( °C)

Fig 14a&b. Unclamped Inductive Test circuit

and Waveforms

6

Fig 14c. Maximum Avalanche Energy

Vs. Drain Current

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