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IRF3706L

HEXFET® Power MOSFET

International Rectifier 

IRF3706/3706S/3706L

Static @ TJ = 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

V(BR)DSS Drain-to-Source Breakdown Voltage 20 ––– ––– V VGS = 0V, ID = 250µA

∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient –––

–––

RDS(on)

Static Drain-to-Source On-Resistance –––

–––

VGS(th)

Gate Threshold Voltage

0.6

–––

IDSS

Drain-to-Source Leakage Current

–––

Gate-to-Source Forward Leakage

–––

IGSS

Gate-to-Source Reverse Leakage –––

0.021

6.0

7.3

11

–––

–––

–––

–––

–––

–––

8.5

10.5

22

2.0

20

100

200

-200

V/°C Reference to 25°C, ID = 1mA

VGS = 10V, ID = 36A ƒ

mΩ VGS = 4.5V, ID = 28A ƒ

VGS = 2.8V, ID = 18A ƒ

V VDS = VGS, ID = 250µA

µA VDS = 16V, VGS = 0V

VDS = 16V, VGS = 0V, TJ = 125°C

nA VGS = 12V

VGS = -12V

Dynamic @ TJ = 25°C (unless otherwise specified)

Symbol

Parameter

Min. Typ. Max. Units

Conditions

gfs

Forward Transconductance

53 ––– ––– S VDS = 16V, ID = 57A

Qg

Total Gate Charge

Qgs

Gate-to-Source Charge

––– 23 35

––– 8.0 12

ID = 28A

nC VDS = 10V

Qgd

Qoss

Gate-to-Drain ("Miller") Charge

Output Gate Charge

––– 5.5 8.3

––– 16 24

VGS = 4.5V ƒ

VGS = 0V, VDS = 10V

td(on)

tr

td(off)

tf

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

––– 6.8 –––

VDD = 10V

––– 87 ––– ns ID = 28A

––– 17 –––

RG = 1.8Ω

––– 4.8 –––

VGS = 4.5V ƒ

Ciss

Input Capacitance

––– 2410 –––

VGS = 0V

Coss

Output Capacitance

––– 1070 –––

VDS = 10V

Crss

Reverse Transfer Capacitance

––– 140 ––– pF ƒ = 1.0MHz

Avalanche Characteristics

Symbol

EAS

IAR

Parameter

Single Pulse Avalanche Energy‚

Avalanche Current

Typ.

–––

–––

Max.

220

28

Units

mJ

A

Diode Characteristics

Symbol

IS

ISM

Parameter

Continuous Source Current

(Body Diode)

Pulsed Source Current

(Body Diode) 

VSD

Diode Forward Voltage

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

2

Min. Typ. Max. Units

Conditions

MOSFET symbol

D

––– ––– 77

A

showing the

integral reverse

G

––– ––– 280

p-n junction diode.

S

––– 0.88 1.3 V TJ = 25°C, IS = 36A, VGS = 0V ƒ

––– 0.82 –––

TJ = 125°C, IS = 36A, VGS = 0V ƒ

––– 45 68

––– 65 98

ns TJ = 25°C, IF = 36A, VR=20V

nC di/dt = 100A/µs ƒ

––– 49 74 ns TJ = 125°C, IF = 36A, VR=20V

––– 78 120 nC di/dt = 100A/µs ƒ

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