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IRF7459 Ver la hoja de datos (PDF) - International Rectifier

Número de pieza
componentes Descripción
Lista de partido
IRF7459
IR
International Rectifier IR
IRF7459 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
IRF7459
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
20
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient –––
–––
RDS(on)
Static Drain-to-Source On-Resistance –––
–––
VGS(th)
Gate Threshold Voltage
0.6
–––
IDSS
Drain-to-Source Leakage Current
–––
Gate-to-Source Forward Leakage
–––
IGSS
Gate-to-Source Reverse Leakage
–––
––– –––
0.024 –––
6.7 9.0
8.0 11
11 22
––– 2.0
––– 20
––– 100
––– 200
––– -200
V
V/°C
m
V
µA
nA
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 12A ƒ
VGS = 4.5V, ID = 9.6A ƒ
VGS = 2.8V, ID = 6.0A ƒ
VDS = VGS, ID = 250µA
VDS = 16V, VGS = 0V
VDS = 16V, VGS = 0V, TJ = 125°C
VGS = 12V
VGS = -12V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Qg
Qgs
Qgd
Qoss
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Output Gate Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
32 ––– –––
––– 23 35
––– 6.6 10
––– 6.3 9.5
––– 17 26
––– 10 –––
––– 4.5 –––
––– 20 –––
––– 5.0 –––
––– 2480 –––
––– 1030 –––
––– 130 –––
S VDS = 16V, ID = 9.6A
ID = 9.6A
nC VDS = 10V
VGS = 4.5V ƒ
VGS = 0V, VDS = 10V
VDD = 10V,
ns ID = 9.6A
RG = 1.8
VGS = 4.5V ƒ
VGS = 0V
VDS = 10V
pF ƒ = 1.0MHz
Avalanche Characteristics
Parameter
EAS
Single Pulse Avalanche Energy‚
IAR
Avalanche Current
Typ.
–––
–––
Max.
290
12
Units
mJ
A
Diode Characteristics
Symbol
IS
ISM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
2
Min.
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max.
––– 2.5
––– 100
0.84 1.3
0.69 –––
70 105
70 105
70 105
75 113
Units
A
V
ns
nC
ns
nC
Conditions
MOSFET symbol
D
showing the
integral reverse
G
p-n junction diode.
S
TJ = 25°C, IS = 9.6A, VGS = 0V ƒ
TJ = 125°C, IS = 9.6A, VGS = 0V
TJ = 25°C, IF = 9.6A, VR= 15V
di/dt = 100A/µs ƒ
TJ = 125°C, IF = 9.6A, VR=15V
di/dt = 100A/µs ƒ
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