IRF3708S Ver la hoja de datos (PDF) - International Rectifier

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IRF3708S

HEXFET® Power MOSFET

International Rectifier 

IRF3708/3708S/3708L

0.025

0.017

0.020

0.015

0.015

VGS = 4.5V

0.010

0.005

0

VGS = 10V

50 100 150 200 250 300

ID , Drain Current ( A )

Fig 12. On-Resistance Vs. Drain Current

Current Regulator

Same Type as D.U.T.

50KΩ

12V

.2µF

.3µF

VGS

3mA

D.U.T.

+

-VDS

VGS

QGS

VG

IG

ID

Current Sampling Resistors

QG

QGD

Charge

Fig 14a&b. Gate Charge Test Circuit

and Waveform

0.013

0.011

0.009

ID = 31A

0.007

2.0

3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0

VGS, Gate -to -Source Voltage (V)

Fig 13. On-Resistance Vs. Gate Voltage

600

 TOP

ID

10A

20.7A

480

BOTTOM 24.8A

360

240

V (B R )D SS

tp

IAS

VDS

L

RG

20V

tp

D.U .T

IA S

0.0 1Ω

15V

DRIVER

+

- VD D

A

120

0

25

50

75

100 125 150

175

Starting TJ , Junction Temperature ( °C)

Fig 15a&b. Unclamped Inductive Test circuit

and Waveforms

6

Fig 15c. Maximum Avalanche Energy

Vs. Drain Current

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