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IRF3707S

HEXFET® Power MOSFET

International Rectifier 

IRF3707/3707S/3707L

Static @ TJ = 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

V(BR)DSS Drain-to-Source Breakdown Voltage

30

∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient –––

RDS(on)

–––

Static Drain-to-Source On-Resistance –––

VGS(th)

Gate Threshold Voltage

1.0

–––

IDSS

Drain-to-Source Leakage Current

–––

IGSS

Gate-to-Source Forward Leakage

–––

Gate-to-Source Reverse Leakage

–––

––– –––

0.027 –––

9.0 12.5

12.6 17

––– 3.0

––– 20

––– 100

––– 200

––– -200

V VGS = 0V, ID = 250µA

V/°C Reference to 25°C, ID = 1mA

mΩ

VGS = 10V, ID = 15A ƒ

VGS = 4.5V, ID = 12A ƒ

V VDS = VGS, ID = 250µA

µA VDS = 24V, VGS = 0V

VDS = 24V, VGS = 0V, TJ = 125°C

nA VGS = 16V

VGS = -16V

Dynamic @ TJ = 25°C (unless otherwise specified)

Symbol

Parameter

Min. Typ. Max. Units

Conditions

gfs

Qg

Qgs

Qgd

Qoss

td(on)

tr

td(off)

tf

Ciss

Coss

Crss

Forward Transconductance

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Output Gate Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

37 ––– –––

––– 19 –––

––– 8.2 –––

––– 6.3 –––

––– 18 27

––– 8.5 –––

––– 78 –––

––– 11.8 –––

––– 3.3 –––

––– 1990 –––

––– 707 –––

––– 50 –––

S VDS = 15V, ID = 49.6A

ID = 24.8A

nC VDS = 15V

VGS = 4.5V ƒ

VGS = 0V, VDS = 15V

VDD = 15V

ns ID = 24.8A

RG = 1.8Ω

VGS = 4.5V ƒ

VGS = 0V

VDS = 15V

pF ƒ = 1.0MHz

Avalanche Characteristics

Symbol

EAS

IAR

Parameter

Single Pulse Avalanche Energy‚

Avalanche Current

Typ.

–––

–––

Max.

213

62

Units

mJ

A

Diode Characteristics

Symbol

IS

ISM

Parameter

Continuous Source Current

(Body Diode)

Pulsed Source Current

(Body Diode) 

VSD

Diode Forward Voltage

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

2

Min. Typ. Max. Units

Conditions

––– ––– 62

––– ––– 248

––– 0.88 1.3

––– 0.8 –––

MOSFET symbol

D

A showing the

integral reverse

G

p-n junction diode.

S

V TJ = 25°C, IS = 31A, VGS = 0V ƒ

TJ = 125°C, IS = 31A, VGS = 0V ƒ

––– 39 59

––– 49 74

ns TJ = 25°C, IF = 31A, VR=20V

nC di/dt = 100A/µs ƒ

––– 42 63

––– 62 93

ns TJ = 125°C, IF = 31A, VR=20V

nC di/dt = 100A/µs ƒ

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