IRF3707L Ver la hoja de datos (PDF) - International Rectifier

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IRF3707L

HEXFET® Power MOSFET

International Rectifier 

IRF3707/3707S/3707L

0.10

0.09

0.08

0.07

0.06

0.05

0.04

0.03

0.02

0.01

0.00

0

VGS = 4.5V

VGS = 10V

50

100 150 200 250

ID , Drain Current ( A )

Fig 12. On-Resistance Vs. Drain Current

Current Regulator

Same Type as D.U.T.

50KΩ

12V

.2µF

.3µF

VGS

3mA

D.U.T.

+

-VDS

VGS

QGS

VG

IG

ID

Current Sampling Resistors

QG

QGD

Charge

Fig 14a&b. Basic Gate Charge Test circuit

and Waveforms

0.013

0.012

0.011

0.010

ID = 31A

0.009

4.0

5.0

6.0

7.0

8.0

9.0 10.0

VGS, Gate -to -Source Voltage (V)

Fig 13. On-Resistance Vs. Gate Voltage

600

500

 TOP

ID

10.1A

20.7A

BOTTOM 24.8A

400

300

V (B R )D SS

tp

IAS

VDS

L

RG

20V

tp

D.U .T

IA S

0.0 1Ω

15V

DRIVER

+

- VD D

A

200

100

0

25

50

75

100 125 150 175

Starting TJ , Junction Temperature ( °C)

Fig 15a&b. Unclamped Inductive Test circuit

and Waveforms

6

Fig 15c. Maximum Avalanche Energy

Vs. Drain Current

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