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IRF7458

HEXFET® Power MOSFET

International Rectifier 

IRF7458

Static @ TJ = 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

V(BR)DSS Drain-to-Source Breakdown Voltage

30

∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient –––

RDS(on)

–––

Static Drain-to-Source On-Resistance –––

VGS(th)

Gate Threshold Voltage

2.0

–––

IDSS

Drain-to-Source Leakage Current

–––

IGSS

Gate-to-Source Forward Leakage

–––

Gate-to-Source Reverse Leakage

–––

––– –––

0.029 –––

6.3 8.0

7.0 9.0

––– 4.0

––– 20

––– 100

––– 200

––– -200

V VGS = 0V, ID = 250µA

V/°C Reference to 25°C, ID = 1mA

mΩ VGS = 16V, ID = 14A ƒ

VGS = 10V, ID = 11A ƒ

V VDS = VGS, ID = 250µA

µA VDS = 24V, VGS = 0V

VDS = 24V, VGS = 0V, TJ = 125°C

nA VGS = 24V

VGS = -24V

Dynamic @ TJ = 25°C (unless otherwise specified)

Symbol

Parameter

Min. Typ. Max. Units

Conditions

gfs

Qg

Qgs

Qgd

Qoss

td(on)

tr

td(off)

tf

Ciss

Coss

Crss

Forward Transconductance

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Output Gate Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

26 ––– –––

––– 39 59

––– 11 17

––– 8.7 13

––– 29 44

––– 10 –––

––– 4.6 –––

––– 22 –––

––– 5.0 –––

––– 2410 –––

––– 1100 –––

––– 110 –––

S VDS = 15V, ID = 11A

ID = 11A

nC VDS = 15V

VGS = 10V ƒ

VGS = 0V, VDS = 16V

VDD = 15V

ns ID = 11A

RG = 1.8Ω

VGS = 10V ƒ

VGS = 0V

VDS = 15V

pF ƒ = 1.0MHz

Avalanche Characteristics

Symbol

EAS

IAR

Parameter

Single Pulse Avalanche Energy‚

Avalanche Current

Typ.

–––

–––

Max.

280

11

Units

mJ

A

Diode Characteristics

Symbol

IS

ISM

Parameter

Continuous Source Current

(Body Diode)

Pulsed Source Current

(Body Diode) 

VSD

Diode Forward Voltage

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

2

Min.

–––

–––

–––

–––

–––

–––

–––

–––

Typ.

–––

–––

0.82

0.68

51

87

52

93

Max.

2.3

110

1.3

–––

77

130

78

140

Units

A

V

ns

nC

ns

nC

Conditions

MOSFET symbol

D

showing the

integral reverse

G

p-n junction diode.

S

TJ = 25°C, IS = 11A, VGS = 0V ƒ

TJ = 125°C, IS = 11A, VGS = 0V

TJ = 25°C, IF = 11A, VR= 20V

di/dt = 100A/µs ƒ

TJ = 125°C, IF = 11A, VR=20V

di/dt = 100A/µs ƒ

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