IRFPS43N50KPBF Ver la hoja de datos (PDF) - International Rectifier

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IRFPS43N50KPBF

HEXFET power MOSFET. VDSS = 500 V, RDS(on) = 0.078 Ohm, ID = 47 A

International Rectifier 

IRFPS43N50K

1000

100

VGS

TOP 15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM4.5V

10

1

4.5V

0.1

0.01

0.1

20µs PULSE WIDTH

TJ = 25 °C

1

10

100

VDS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

1000

100

VGS

TOP 15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM4.5V

10

4.5V

1

0.1

0.1

20µs PULSE WIDTH

TJ = 150°C

1

10

100

VDS , Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

1000

100

TJ = 150° C

10

TJ = 25°C

1

0.1

4

V DS= 50V

20µs PULSE WIDTH

5 6 7 8 9 10 11 12

VGS, Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

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3.5 ID = 48A

3.0

2.5

2.0

1.5

1.0

0.5

VGS= 10V

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ , Junction Temperature (° C)

Fig 4. Normalized On-Resistance

Vs. Temperature

3

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