IRFPS43N50K Ver la hoja de datos (PDF) - International Rectifier

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Lista de partido

IRFPS43N50K

HEXFET power MOSFET. VDSS = 500 V, RDS(on) = 0.078 Ohm, ID = 47 A

International Rectifier 

IRFPS43N50K

1000000

100000

10000

VGS = 0V, f = 1 MHZ

Ciss = Cgs + Cgd, Cds SHORTED

Crss = Cgd

Coss = Cds + Cgd

Ciss

1000

100

Coss

Crss

10

1

10

100

1000

VDS, Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

20 ID = 48A

15

VDS= 400V

VDS= 250V

VDS= 100V

10

5

0

0 50 100 150 200 250 300 350

QG , Total Gate Charge (nC)

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

1000

100

TJ = 150° C

10

TJ = 25° C

1

0.1

0.2

V GS = 0 V

0.7

1.2

1.7

2.2

VSD ,Source-to-Drain Voltage (V)

Fig 7. Typical Source-Drain Diode

Forward Voltage

4

1000

OPERATION IN THIS AREA LIMITED

BY RDS(on)

100

10us

100us

10

1ms

TC= 25 °C

TJ = 150 °C

Single Pulse

1

10

100

10ms

1000

VDS , Drain-to-Source Voltage (V)

Fig 8. Maximum Safe Operating Area

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