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IRFPS40N50L

SMPS MOSFET

International Rectifier 

IRFPS40N50L

Static @ TJ = 25°C (unless otherwise specified)

Symbol

Parameter

Min. Typ. Max. Units

Conditions

V(BR)DSS

∆V(BR)DSS/∆TJ

RDS(on)

VGS(th)

Drain-to-Source Breakdown Voltage

Breakdown Voltage Temp. Coefficient

Static Drain-to-Source On-Resistance

Gate Threshold Voltage

IDSS

Drain-to-Source Leakage Current

Gate-to-Source Forward Leakage

IGSS

Gate-to-Source Reverse Leakage

500 ––– ––– V VGS = 0V, ID = 250µA

––– 0.60 ––– V/°C Reference to 25°C, ID = 1mA†

––– 0.087 0.100 Ω VGS = 10V, ID = 28A „

3.0 ––– 5.0 V VDS = VGS, ID = 250µA

––– ––– 50 µA VDS = 500V, VGS = 0V

––– ––– 2.0 mA VDS = 400V, VGS = 0V, TJ = 125°C

––– ––– 100 nA VGS = 30V

––– ––– -100

VGS = -30V

Dynamic @ TJ = 25°C (unless otherwise specified)

Symbol

Parameter

Min. Typ. Max. Units

Conditions

gfs

Qg

Qgs

Qgd

td(on)

tr

td(off)

tf

Ciss

Coss

Crss

Coss

Coss

Coss eff.

Forward Transconductance

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Output Capacitance

Output Capacitance

Effective Output Capacitance

21 ––– ––– S VDS = 50V, ID = 46A

––– ––– 380

ID = 46A

––– ––– 80 nC VDS = 400V

––– ––– 190

VGS = 10V, See Fig. 6 and 13 „

––– 27 –––

VDD = 250V

––– 170 ––– ns ID = 46A

––– 50 –––

RG = 0.85Ω

––– 69 –––

VGS = 10V,See Fig. 10 „

––– 8110 –––

VGS = 0V

––– 960 –––

VDS = 25V

––– 130 ––– pF ƒ = 1.0MHz, See Fig. 5

––– 11200 –––

VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz

––– 240 –––

––– 420 –––

VGS = 0V, VDS = 400V, ƒ = 1.0MHz

VGS = 0V, VDS = 0V to 400V …

Avalanche Characteristics

Symbol

EAS

IAR

EAR

Parameter

Single Pulse Avalanche Energy‚

Avalanche Current

Repetitive Avalanche Energy

Typ.

–––

–––

–––

Max.

920

46

54

Units

mJ

A

mJ

Thermal Resistance

Symbol

RθJC

RθCS

RθJA

Parameter

Junction-to-Case

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient

Typ.

–––

0.24

–––

Max.

0.23

–––

40

Units

°C/W

Notes:

 Repetitive rating; pulse width limited by

max. junction temperature. (See Fig. 11)

‚ Starting TJ = 25°C, L = 0.86mH, RG = 25Ω,

IAS = 46A (See Figure 12a)

ƒ ISD ≤ 46A, di/dt ≤ 367A/µs, VDD ≤ V(BR)DSS,

TJ ≤ 150°C.

2

„ Pulse width ≤ 400µs; duty cycle ≤ 2%.

… Coss eff. is a fixed capacitance that gives the same charging time

as Coss while VDS is rising from 0 to 80% VDSS

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