IRFPS37N50A Ver la hoja de datos (PDF) - International Rectifier
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IRFPS37N50A Datasheet PDF : 8 Pages
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IRFPS37N50A
Static @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
RDS(on)
VGS(th)
IDSS
IGSS
Parameter
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min. Typ. Max. Units
Conditions
500 ––– ––– V VGS = 0V, ID = 250µA
––– ––– 0.13 Ω VGS = 10V, ID = 22A
2.0 ––– 4.0 V VDS = VGS, ID = 250µA
––– ––– 25
––– ––– 250
µA VDS = 500V, VGS = 0V
VDS = 400V, VGS = 0V, TJ = 150°C
––– ––– 100 nA VGS = 30V
––– ––– -100
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
gfs
Forward Transconductance
Qg
Total Gate Charge
Qgs
Gate-to-Source Charge
Qgd
Gate-to-Drain ("Miller") Charge
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Coss
Output Capacitance
Coss
Output Capacitance
Coss eff. Effective Output Capacitance
Avalanche Characteristics
Min. Typ. Max. Units
Conditions
20 ––– ––– S VDS = 50V, ID = 22A
––– ––– 180
––– ––– 46
––– ––– 71
––– 23 –––
ID = 36A
nC VDS = 400V
VGS = 10V, See Fig. 6 and 13
VDD = 250V
––– 98 ––– ns ID = 36A
––– 52 –––
RG = 2.15Ω
––– 80 –––
RD = 7.0Ω,See Fig. 10
––– 5579 –––
VGS = 0V
––– 810 –––
VDS = 25V
––– 36 ––– pF ƒ = 1.0MHz, See Fig. 5
––– 7905 –––
––– 221 –––
––– 400 –––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 400V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 400V
Parameter
EAS
Single Pulse Avalanche Energy
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
Thermal Resistance
Typ.
–––
–––
–––
Max.
1260
36
44
Units
mJ
A
mJ
Parameter
RθJC
RθCS
RθJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Diode Characteristics
Typ.
–––
0.24
–––
Max.
0.28
–––
40
Units
°C/W
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
ton
Forward Turn-On Time
2
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
––– ––– 36
A showing the
integral reverse
G
––– ––– 144
p-n junction diode.
S
––– ––– 1.5 V TJ = 25°C, IS = 36A, VGS = 0V
––– 570 860 ns TJ = 25°C, IF = 36A
––– 8.6 13 µC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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