IRFPS37N50 Ver la hoja de datos (PDF) - International Rectifier
Número de pieza
componentes Descripción
Lista de partido
IRFPS37N50 Datasheet PDF : 8 Pages
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IRFPS37N50A
100000
10000
V GS = 0V,
f = 1MHz
C is s = C gs + C gd, C dsSHORTED
C rss = C gd
C oss = C ds + C gd
C iss
1000
C oss
100
10
1
C rss
10
100
V DS , D rain-to-Source Volta ge (V)
A
1000
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20
ID = 36A
16
12
VDS = 400V
VDS = 250V
VDS = 100V
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
40
80
120
160
200
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
100
TJ = 150° C
10
TJ = 25° C
1
0.1
0.2
VGS = 0 V
0.4
0.6
0.8
1.0
1.2
1.4
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
100
10us
100us
10
1ms
TC = 25 °C
TJ = 150°C
Single Pulse
1
10
100
10ms
1000
VDS, Drain-to-Source Voltage (V)
10000
Fig 8. Maximum Safe Operating Area
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