IRFP048N Ver la hoja de datos (PDF) - International Rectifier
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IRFP048N Datasheet PDF : 8 Pages
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IRFP048N
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
∆V(BR)DSS/∆TJ
RDS(on)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD
Internal Drain Inductance
LS
Ciss
Coss
Crss
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max.
55 ––– –––
––– 0.052 –––
––– ––– 0.016
2.0 ––– 4.0
22 ––– –––
––– ––– 25
––– ––– 250
––– ––– 100
––– ––– -100
––– ––– 89
––– ––– 20
––– ––– 39
––– 11 –––
––– 78 –––
––– 32 –––
––– 48 –––
––– 5.0 –––
––– 13 –––
––– 1900 –––
––– 620 –––
––– 270 –––
Units
V
V/°C
Ω
V
S
µA
nA
nC
ns
nH
pF
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 37A
VDS = VGS, ID = 250µA
VDS = 25V, ID = 32A
VDS = 55V, VGS = 0V
VDS = 44V, VGS = 0V, TJ = 150°C
VGS = 20V
VGS = -20V
ID = 32A
VDS = 44V
VGS = 10V, See Fig. 6 and 13
VDD = 28V
ID = 32A
RG = 5.1Ω
RD = 0.85Ω, See Fig. 10
Between lead,
D
6mm (0.25in.)
from package
G
and center of die contact
S
VGS = 0V
VDS = 25V
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
––– ––– 45
showing the
A integral reverse
G
––– ––– 210
p-n junction diode.
S
––– ––– 1.3 V TJ = 25°C, IS = 37A, VGS = 0V
––– 94 140 ns TJ = 25°C, IF = 32A
––– 360 540 nC di/dt = 100A/µs
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
VDD = 25V, starting TJ = 25°C, L = 530µH
RG = 25Ω, IAS = 32A. (See Figure 12)
ISD ≤ 32A, di/dt ≤ 250A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Uses IRFZ48N data and test conditions
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