IRFR4105TR Ver la hoja de datos (PDF) - International Rectifier

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IRFR4105TR

HEXFET® Power MOSFET

International Rectifier 

IRFR/U4105

1000

100

VGS

TOP

15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM 4.5V

1000

100

VGS

TOP

15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM 4.5V

10

4.5V

1

0.1

0.1

20µs PULSE W IDTH

TC = 25°C

A

1

10

100

VDS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

10

4.5V

1

0.1

0.1

20µs PULSE W IDTH

TC = 175°C

A

1

10

100

VDS , Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

100

TJ = 2 5 °C

TJ = 1 7 5°C

2.4

ID = 26A

2.0

1.6

10

1.2

0.8

0.4

tion

VDS = 25V

20µs PULSE W IDTH

1

A

4

5

6

7

8

9

10

0.0

VGS = 10V

A

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

VGS , Gate-to-Source Voltage (V)

TJ , Junction Temperature (°C)

Fig 3. Typical Transfer Characteristics

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Fig 4. Normalized On-Resistance

Vs. Temperature

3

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