IRFL4105 Ver la hoja de datos (PDF) - International Rectifier

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IRFL4105

HEXFET® Power MOSFET

International Rectifier 

100

VGS

TOP

15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM 4.5V

10

4 .5 V

20µs PULSE W IDTH

1

TC = 25°C

A

0.1

1

10

100

VDS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics,

TJ = 25oC

100

TJ = 25°C

TJ = 150°C

10

VDS = 25V

20µs PULSE W IDTH

1

A

4.0

4.5

5.0

5.5

6.0

6.5

7.0

VGS , Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

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100

VGS

TOP

15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM 4.5V

10

IRFL4105

4.5V

20µs PULSE W IDTH

1

TJ = 150°C

A

0.1

1

10

100

VDS , Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics,

TJ = 150oC

2.0

ID = 3.7A

1.5

1.0

0.5

0.0

-60

VGS = 10V

A

-40 -20 0 20 40 60 80 100 120 140 160

TJ , Junction Tem perature (°C)

Fig 4. Normalized On-Resistance

Vs. Temperature

3

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