IRFL024 Ver la hoja de datos (PDF) - International Rectifier
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IRFL024 Datasheet PDF : 8 Pages
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IRFL024N
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
∆V(BR)DSS/∆TJ
RDS(on)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
55 ––– ––– V VGS = 0V, ID = 250µA
––– 0.056 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 0.075 Ω VGS = 10V, ID = 2.8A
2.0 ––– 4.0 V VDS = VGS, ID = 250µA
3.0 ––– ––– S VDS = 25V, ID = 1.68A
––– ––– 25
––– ––– 250
µA VDS = 55V, VGS = 0V
VDS = 44V, VGS = 0V, TJ = 125°C
––– ––– 100 nA VGS = 20V
––– ––– -100
VGS = -20V
––– ––– 18.3
ID = 1.68A
––– ––– 3.0
––– ––– 7.7
nC VDS = 44V
VGS = 10V, See Fig. 6 and 9
––– 8.1 –––
VDD = 28V
––– 13.4 ––– ns ID = 1.68A
––– 22.2 –––
RG = 24Ω
––– 17.7 –––
RD = 17Ω, See Fig. 10
––– 400 –––
––– 145 –––
VGS = 0V
pF VDS = 25V
––– 60 –––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
––– ––– 2.8
showing the
A integral reverse
––– ––– 11.2
p-n junction diode.
––– ––– 1.0
––– 35 53
––– 50 75
V TJ = 25°C, IS =1.68A, VGS = 0V
ns TJ = 25°C, IF = 1.68A
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting TJ = 25°C, L = 54.7 mH
RG = 25Ω, IAS = 2.8A. (See Figure 12)
ISD ≤ 1.68A, di/dt ≤ 155A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
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