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IRFL014N

HEXFET® Power MOSFET

International Rectifier 

IRFL014N

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

V(BR)DSS

∆V(BR)DSS/∆TJ

RDS(on)

VGS(th)

gfs

Parameter

Drain-to-Source Breakdown Voltage

Breakdown Voltage Temp. Coefficient

Static Drain-to-Source On-Resistance

Gate Threshold Voltage

Forward Transconductance

IDSS

Drain-to-Source Leakage Current

IGSS

Qg

Qgs

Qgd

td(on)

tr

td(off)

tf

Ciss

Coss

Crss

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Min. Typ. Max.

55 ––– –––

––– 0.054 –––

––– ––– 0.16

2.0 ––– 4.0

1.6 ––– –––

––– ––– 1.0

––– ––– 25

––– ––– 100

––– ––– -100

––– 7.0 11

––– 1.2 1.8

––– 3.3 5.0

––– 6.6 –––

––– 7.1 –––

––– 12 –––

––– 3.3 –––

––– 190 –––

––– 72 –––

––– 33 –––

Units

V

V/°C

Ω

V

S

µA

nA

nC

ns

pF

Conditions

VGS = 0V, ID = 250µA

Reference to 25°C, ID = 1mA

VGS = 10V, ID = 1.9A „

VDS = VGS, ID = 250µA

VDS = 25V, ID = 0.85A

VDS = 44V, VGS = 0V

VDS = 44V, VGS = 0V, TJ = 150°C

VGS = 20V

VGS = -20V

ID = 1.7A

VDS = 44V

VGS = 10V, See Fig. 6 and 13 „

VDD = 28V

ID = 1.7A

RG = 6.0Ω

RD = 16Ω, See Fig. 10 „

VGS = 0V

VDS = 25V

ƒ = 1.0MHz, See Fig. 5

Source-Drain Ratings and Characteristics

Parameter

IS

Continuous Source Current

(Body Diode)

ISM

Pulsed Source Current

(Body Diode) 

VSD

Diode Forward Voltage

trr

Reverse Recovery Time

Qrr

Reverse RecoveryCharge

Min. Typ. Max. Units

Conditions

––– ––– 1.3

––– ––– 15

MOSFET symbol

showing the

A integral reverse

p-n junction diode.

––– ––– 1.0 V TJ = 25°C, IS = 1.7A, VGS = 0V ƒ

––– 41 61

––– 64 95

ns TJ = 25°C, IF = 1.7A

nC di/dt = 100A/µs ƒ

Notes:

 Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

‚ VDD = 25V, starting TJ = 25°C, L = 8.2mH

RG = 25Ω, IAS = 3.4A. (See Figure 12)

ƒ ISD ≤ 1.7A, di/dt ≤ 250A/µs, VDD ≤ V(BR)DSS,

TJ ≤ 150°C

„ Pulse width ≤ 300µs; duty cycle ≤ 2%.

2

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