IRF1405L Ver la hoja de datos (PDF) - International Rectifier

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IRF1405L

AUTOMOTIVE MOSFET

International Rectifier 

IRF1405S/L

100000

10000

1000

VGS = 0V, f = 1 MHZ

Ciss = Cgs + Cgd, Cds SHORTED

Crss = Cgd

Coss = Cds + Cgd

Ciss

Coss

Crss

100

1

10

100

VDS, Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

20

ID = 101A

16

VDS = 44V

VDS = 27V

12

8

4

FOR TEST CIRCUIT

SEE FIGURE 13

0

0

60

120

180

240

300

QG , Total Gate Charge (nC)

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

1000

TJ = 175° C

100

TJ = 25° C

10

VGS = 0 V

1

0.0 0.5 1.0 1.5 2.0 2.5 3.0

VSD ,Source-to-Drain Voltage (V)

Fig 7. Typical Source-Drain Diode

Forward Voltage

4

10000

OPERATION IN THIS AREA LIMITED

BY RDS(on)

1000

10us

100

100us

1ms

10

10ms

TC = 25°C

TJ = 175°C

Single Pulse

1

1

10

100

VDS , Drain-to-Source Voltage (V)

Fig 8. Maximum Safe Operating Area

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