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IRF3808S

AUTOMOTIVE MOSFET

International Rectifier 

IRF3808S/IRF3808L

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

V(BR)DSS

∆V(BR)DSS/∆TJ

RDS(on)

VGS(th)

gfs

Drain-to-Source Breakdown Voltage

Breakdown Voltage Temp. Coefficient

Static Drain-to-Source On-Resistance

Gate Threshold Voltage

Forward Transconductance

IDSS

Drain-to-Source Leakage Current

IGSS

Qg

Qgs

Qgd

td(on)

tr

td(off)

tf

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

LD

Internal Drain Inductance

LS

Ciss

Coss

Crss

Coss

Coss

Coss eff.

Internal Source Inductance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Output Capacitance

Output Capacitance

Effective Output Capacitance U

75 ––– –––

––– 0.086 –––

––– 5.9 7.0

2.0 ––– 4.0

100 ––– –––

––– ––– 20

––– ––– 250

––– ––– 200

––– ––– -200

––– 150 220

––– 31 47

––– 50 76

––– 16 –––

––– 140 –––

––– 68 –––

––– 120 –––

––– 4.5 –––

––– 7.5 –––

––– 5310 –––

––– 890 –––

––– 130 –––

––– 6010 –––

––– 570 –––

––– 1140 –––

V

V/°C

mΩ

V

S

µA

nA

nC

ns

nH

pF

VGS = 0V, ID = 250µA

Reference to 25°C, ID = 1mA

VGS = 10V, ID = 82A T

VDS = 10V, ID = 250µA

VDS = 25V, ID = 82A

VDS = 75V, VGS = 0V

VDS = 60V, VGS = 0V, TJ = 150°C

VGS = 20V

VGS = -20V

ID = 82A

VDS = 60V

VGS = 10VT

VDD = 38V

ID = 82A

RG = 2.5Ω

VGS = 10V T

Between lead,

D

6mm (0.25in.)

from package

G

and center of die contact

S

VGS = 0V

VDS = 25V

ƒ = 1.0MHz, See Fig. 5

VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz

VGS = 0V, VDS = 60V, ƒ = 1.0MHz

VGS = 0V, VDS = 0V to 60V

Source-Drain Ratings and Characteristics

Parameter

IS

Continuous Source Current

(Body Diode)

ISM

Pulsed Source Current

(Body Diode) Q

VSD

Diode Forward Voltage

trr

Reverse Recovery Time

Qrr

Reverse RecoveryCharge

ton

Forward Turn-On Time

Notes:

Q Repetitive rating; pulse width limited by

max. junction temperature. (See fig. 11).

R Starting TJ = 25°C, L = 0.130mH

RG = 25Ω, IAS = 82A. (See Figure 12).

S ISD ≤ 82A, di/dt ≤ 310A/µs, VDD ≤ V(BR)DSS,

TJ ≤ 175°C

T Pulse width ≤ 400µs; duty cycle ≤ 2%.

2

Min. Typ. Max. Units

Conditions

MOSFET symbol

D

––– ––– 106V

A

showing the

integral reverse

G

––– ––– 550

p-n junction diode.

S

––– ––– 1.3 V TJ = 25°C, IS = 82A, VGS = 0VT

––– 93 140 ns TJ = 25°C, IF = 82A

––– 340 510 nC di/dt = 100A/µsT

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

U Coss eff. is a fixed capacitance that gives the same charging time

as Coss while VDS is rising from 0 to 80% VDSS .

V Calculated continuous current based on maximum allowable

junction temperature. Package limitation current is 75A.

W Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive

avalanche performance.

** When mounted on 1" square PCB ( FR-4 or G-10 Material ).

For recommended footprint and soldering techniques refer to

application note #AN-994.

www.irf.com

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