IRFBF20S Ver la hoja de datos (PDF) - International Rectifier
Número de pieza
componentes Descripción
Lista de partido
IRFBF20S Datasheet PDF : 10 Pages
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PRELIMINARY
l Surface Mount (IRFBF20S)
l Low-profile through-hole (IRFBF20L)
l Available in Tape & Reel (IRFBF20S)
l Dynamic dv/dt Rating
l 150°C Operating Temperature
G
l Fast Switching
l Fully Avalanche Rated
PD - 9.1665
IRFBF20S/L
HEXFET® Power MOSFET
D
VDSS = 900V
RDS(on) = 8.0Ω
ID = 1.7A
S
Description
Third generation HEXFETs from international Rectifier provide the designer with the
best combination of fast switching, ruggedized device design, low on-resistance and
cost-effectiveness.
The D2Pak is a surface mount power package capable ofthe accommodatingdie sizes
up to HEX-4. It provides the highest power capability and the lowest possible on-
resistance in any existing surface mount package. The D2Pak is suitable for high
current applications because of its low internal connection resistance and can
dissipate up to 2.0W in a typical surface mount application. The through-hole version
(IRFBF20L) is available for low-profile applications.
D 2 Pak
T O -262
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TA = 25°C
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
RθJC
Junction-to-Case
RθJA
Junction-to-Ambient ( PCB Mounted,steady-state)**
Max.
1.7
1.1
6.8
3.1
54
0.43
± 20
180
1.7
5.4
1.5
-55 to + 150
300 (1.6mm from case )
Typ.
–––
–––
Max.
2.3
40
Units
A
W
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
7/10/97
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