IRF460
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BVDSS
Drain-to-Source Breakdown Voltage
500 — — V
VGS = 0V, ID = 1.0mA
∆BVDSS/∆TJ Temperature Coefficient of Breakdown — 0.78 — V/°C Reference to 25°C, ID = 1.0mA
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
— — 0.27
—
— 0.31
Ω
VGS = 10V, ID = 14A ➃
VGS = 10V, ID =21A ➃
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
2.0 — 4.0 V
13 — — S ( )
VDS = VGS, ID =250µA
VDS > 15V, IDS = 14A ➃
IDSS
Zero Gate Voltage Drain Current
— — 25
— — 250 µA
VDS=400V,VGS=0V
VDS =400V
VGS = 0V, TJ = 125°C
IGSS
IGSS
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
—
— 100 nA
— — -100
VGS = 20V
VGS = -20V
Qg
Total Gate Charge
84 — 190
VGS = 10V, ID=21A
Qgs
Gate-to-Source Charge
12 — 27 nC
VDS = 250V
Qgd
Gate-to-Drain (‘Miller’) Charge
60 — 135
td(on)
tr
td(off)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
— — 35
— — 120
ns
— — 130
VDD =250V, ID =21A,
RG =2.35Ω
tf
Fall Time
— — 98
LS + LD
Total Inductance
—
6.1
—
nH
Measured from drain lead (6mm/0.25in. from
package) to source lead (6mm/0.25in. from
package)
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
— 4300
— 1000 — pF
— 250 —
VGS = 0V, VDS = 25V
f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
IS Continuous Source Current (Body Diode)
ISM Pulse Source Current (Body Diode) ➀
— — 21
A
— — 84
Test Conditions
VSD
trr
QRR
ton
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
— — 1.8 V
— — 580 nS
— — 8.1 µC
Tj = 25°C, IS = 21A, VGS = 0V ➃
Tj = 25°C, IF = 21A, di/dt ≤ 100A/µs
VDD ≤ 50V ➃
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
RthJA
Junction to Case
Junction to Ambient
For footnotes refer to the last page
2
Min Typ Max Units
— — 0.42
°C/W
— — 30
Test Conditions
Typical socket mount
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