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MPIC2113

HIGH AND LOW SIDE DRIVER

Motorola => Freescale 

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document

by MPIC2113/D

Power Products Division

Advance Information

HIGH AND LOW SIDE DRIVER

The MPIC2113 is a high voltage, high speed, power MOSFET and IGBT driver

with independent high and low side referenced output channels. Proprietary HVIC

and latch immune CMOS technologies enable ruggedized monolithic construction.

Logic inputs are compatible with standard CMOS or LSTTL outputs. The output

drivers feature a high pulse current buffer stage designed for minimum driver

cross–conduction. Propagation delays are matched to simplify use in high frequen-

cy applications. The floating channel can be used to drive an N–channel power

MOSFET or IGBT in the high side configuration which operates from 10 to 600

volts.

• Floating Channel Designed for Bootstrap Operation

• Fully Operational to +600 V

• Tolerant to Negative Transient Voltage

• dV/dt Immune

• Gate Drive Supply Range from 10 to 20 V

• Undervoltage Lockout for Both Channels

• Separate Logic Supply

• Operating Supply Range from 5 to 20 V

• Logic and Power Ground Operating Offset Range from –5 to +5 V

• CMOS Schmitt–triggered Inputs with Pull–down

• Cycle by Cycle Edge–triggered Shutdown Logic

• Matched Propagation Delay for Both Channels

• Outputs In Phase with Inputs

VOFFSET

IO+/–

VOUT

ton/off (typical)

Delay Matching

PRODUCT SUMMARY

600 V MAX

2 A/2 A

10 – 20 V

120 & 94 ns

10 ns

MPIC2113

HIGH AND LOW

SIDE DRIVER

14

1

P SUFFIX

PLASTIC PACKAGE

CASE 646–06

16

1

DW SUFFIX

PLASTIC PACKAGE

CASE 751G–02

SOIC – WIDE

ORDERING INFORMATION

Device

MPIC2113DW

Package

SOIC WIDE

MPIC2113P

PDIP

8

9 VDD

10 HIN

11 SD

12 LIN

13 VSS

14

HO 7

VB 6

VS 5

4

VCC 3

COM 2

LO 1

14 LEADS PDIP MPIC2113P

PIN CONNECTIONS

(TOP VIEW)

9

10

11 VDD

12 HIN

13 SD

14 LIN

15 VSS

16

HO 8

VB 7

VS 6

5

4

VCC 3

COM 2

LO 1

16 LEADS SOIC (WIDE BODY)

MPIC2113DW

This document contains information on a new product. Specifications and information herein are subject

to change without notice.

© MMoototororloa,laIncT.M19O96S Power MOSFET Transistor Device Data

1

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