RF2119 Ver la hoja de datos (PDF) - RF Micro Devices
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RF2119 Datasheet PDF : 8 Pages
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Preliminary
2
RF2119
HIGH EFFICIENCY 2V POWER AMPLIFIER
Typical Applications
• Two-Way Pagers
• 915MHz ISM Band Equipment
• Spread-Spectrum Systems
• 3V AMPS/ETACS Cellular Handsets
• CDPD Portable Data Cards
• Personal Digital Cellular
2
Product Description
The RF2119 is a high-power, high-efficiency amplifier IC
targeting 2V to 4V handheld systems. The device is man-
ufactured on an advanced Gallium Arsenide Heterojunc-
tion Bipolar Transistor (HBT) process, and has been
designed for use as the final RF amplifier in hand-held
digital cellular equipment, spread spectrum systems, and
other applications in the 800MHz to 960MHz band. The
device is well suited for either CW or pulsed applications.
At 3V, the RF2119 can deliver 29.5dBm of linear output
power. The device is self-contained with 50Ω input and
the output can be easily matched to obtain optimum
power, efficiency, and linearity characteristics. The pack-
age is a PSSOP-16 with backside ground.
3.90
± 0.10
4.90 ± 0.10
0.25 ± 0.05
0.635
6.00 ± 0.20
1.40 ± 0.10
8° MAX
0° MIN
0.60 ± 0.15
0.24
0.20
-A-
0.05 ± 0.05 3
Exposed
Heat Sink
3
2.70 ± 0.10
1.70 ± 0.10
Optimum Technology Matching® Applied
Si BJT
üGaAs HBT
GaAs MESFET
Si Bi-CMOS
SiGe HBT
Si CMOS
GND 1
16 BIAS2
LMATCH 2
15 NC
GND 3
14 RF OUT
VCC 4
13 RF OUT
GND1 5
12 RF OUT
RF IN 6
11 NC
GND 7
BIAS1 8
BIAS
CIRCUITS
10 NC
9 VPC
PACKAGE BASE
GND
Functional Block Diagram
Package Style: PSSOP-16
Features
• Single 2V to 5V Supply
• 30dBm Output Power at 2.5V
• 30dB Small Signal Gain
• 53% Efficiency
• On-board Power Down Mode
• 800MHz to 960MHz Operation
Ordering Information
RF2119
High Efficiency 2V Power Amplifier
RF2119 PCBA Fully Assembled Evaluation Board
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Rev A8 010720
2-55
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