RF2131 Ver la hoja de datos (PDF) - RF Micro Devices

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RF2131

HIGH EFFICIENCY AMPS/ETACS AMPLIFIER

RF Micro Devices 

case conditions, and provides a rugged, robust compo-

nent for the system designer.

High current conditions are also potentially dangerous

to any RF device. High currents lead to high channel

temperatures and may force early failures. The

RF2131 includes temperature compensation circuits in

the bias network to stabilize the RF transistors, thus

limiting the current through the amplifier and protecting

the devices from damage. The same mechanism

works to compensate the currents due to ambient tem-

perature variations.

RF2131

2

Rev B4 010417

2-103

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