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V53C16126H

HIGH PERFORMANCE 128K X 16 BIT FAST PAGE MODE CMOS DYNAMIC RAM

Mosel Vitelic Corporation  

MOSEL VITELIC

Functional Description

The V53C16126H is a CMOS dynamic RAM

optimized for high data bandwidth, low power

applications. It is functionally similar to a traditional

dynamic RAM. The V53C16126H reads and writes

data by multiplexing an 17-bit address into a 9-bit

row and a 8-bit column address. The row address is

latched by the Row Address Strobe (RAS). The

column address “flows through” an internal address

buffer and is latched by the Column Address Strobe

(CAS). Because access time is primarily dependent

on a valid column address rather than the precise

time that the CAS edge occurs, the delay time from

RAS to CAS has little effect on the access time.

Memory Cycle

A memory cycle is initiated by bringing RAS low.

Any memory cycle, once initiated, must not be

ended or aborted before the minimum tRAS time

has expired. This ensures proper device operation

and data integrity. A new cycle must not be initiated

until the minimum precharge time tRP/tCP has

elapsed.

Read Cycle

A Read cycle is performed by holding the Write

Enable (WE) signal High during a RAS/CAS

operation. The column address must be held for a

minimum specified by tAR. Data Out becomes valid

only when tOAC, tRAC, tCAA and tCAC are all

satisifed. As a result, the access time is dependent

on the timing relationships between these

parameters. For example, the access time is limited

by tCAA when tRAC, tCAC and tOAC are all satisfied.

Write Cycle

A Write Cycle is performed by taking WE and

CAS low during a RAS operation. The column

address is latched by CAS. The Write Cycle can be

WE controlled or CAS controlled depending on

V53C16126H

whether WE or CAS falls later. Consequently, the

input data must be valid at or before the falling

edge of WE or CAS, whichever occurs last. In the

CAS-controlled Write Cycle, when the leading edge

of WE occurs prior to the CAS low transition, the

I/O data pins will be in the High-Z state at the

beginning of the Write function. Ending the Write

with RAS or CAS will maintain the output in the

High-Z state.

In the WE controlled Write Cycle, OE must be in

the high state and tOED must be satisfied.

Refresh Cycle

To retain data, 512 Refresh Cycles are required

in each 8 ms period. There are two ways to refresh

the memory:

1. By clocking each of the 512 row addresses (A0

through A8) with RAS at least once every 8 ms.

Any Read, Write, Read-Modify-Write or RAS-

only cycle refreshes the addressed row.

2. Using a CAS-before-RAS Refresh Cycle. If CAS

makes a transition from low to high to low after

the previous cycle and before RAS falls, CAS-

b e f o r e -R A S r e f r e s h i s a c t i v a t e d . T h e

V53C8256H uses the output of an internal 9-bit

counter as the source of row addresses and ig-

nore external address inputs.

CAS-before-RAS is a “refresh-only” mode and no

data access or device selection is allowed. Thus,

the output remains in the High-Z state during the

cycle. A CAS-before-RAS counter test mode is

provided to ensure reliable operation of the internal

refresh counter.

V53C16126H Rev. 1.3 February 1998

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