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GS882Z18BGD-150IV Ver la hoja de datos (PDF) - Giga Semiconductor

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GS882Z18BGD-150IV
GSI
Giga Semiconductor GSI
GS882Z18BGD-150IV Datasheet PDF : 33 Pages
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GS882Z18/36B(B/D)-xxxV
AC Electrical Characteristics
Parameter
Symbol
-250
Min
Max
-200
-150
Unit
Min
Max
Min
Max
Pipeline
Flow Through
Clock Cycle Time
Clock to Output Valid
Clock to Output Invalid
Clock to Output in Low-Z
Setup time
Hold time
Clock Cycle Time
Clock to Output Valid
Clock to Output Invalid
Clock to Output in Low-Z
Setup time
Hold time
tKC
4.0
5.0
6.7
ns
tKQ
3.0
3.0
3.8
ns
tKQX
1.5
1.5
1.5
ns
tLZ1
1.5
1.5
1.5
ns
tS
1.2
1.4
1.5
ns
tH
0.2
0.4
0.5
ns
tKC
5.5
6.5
7.5
ns
tKQ
5.5
6.5
7.5
ns
tKQX
2.0
2.0
2.0
ns
tLZ1
2.0
2.0
2.0
ns
tS
1.5
1.5
1.5
ns
tH
0.5
0.5
0.5
ns
Clock HIGH Time
tKH
1.3
1.3
1.5
ns
Clock LOW Time
tKL
1.7
1.7
1.7
ns
Clock to Output in
High-Z
tHZ1
1.5
2.5
1.5
3.0
1.5
3.0
ns
G to Output Valid
tOE
2.5
3.0
3.8
ns
G to output in Low-Z
G to output in High-Z
ZZ setup time
ZZ hold time
tOLZ1
tOHZ1
tZZS2
tZZH2
0
0
0
ns
2.5
3.0
3.8
ns
5
5
5
ns
1
1
1
ns
ZZ recovery
tZZR
20
20
20
ns
Notes:
1. These parameters are sampled and are not 100% tested.
2. ZZ is an asynchronous signal. However, in order to be recognized on any given clock cycle, ZZ must meet the specified setup and hold
times as specified above.
Rev: 1.04 6/2006
18/33
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
NoBL is a trademark of Cypress Semiconductor Corp.. NtRAM is a trademark of Samsung Electronics Co.. ZBT is a trademark of Integrated Device Technology, Inc.
© 2004, GSI Technology

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