IRFE9230
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
BVDSS
∆BVDSS/∆TJ
RDS(on)
VGS(th)
gfs
IDSS
Parameter
Drain-to-Source Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Static Drain-to-Source On-State
Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
IGSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Min Typ Max Units
-200 — —
V
— -0.21 — V/°C
— — 0.80
—
— 1.68 Ω
-2.0 — -4.0 V
2.2 — — S ( )
— — -25
— — -250 µA
—
—
—
—
-100
100
nA
— — 35
— — 6.1 nC
— — 21
— — 50
—
—
—
—
100
80
ns
— — 80
— 6.1 — nH
— 700
— 200 — pF
— 45 —
Test Conditions
VGS = 0V, ID = -1.0mA
Reference to 25°C, ID = -1.0mA
VGS = -10V, ID = -2.4A➃
VGS = -10V, ID = -4.0A ➃
VDS = VGS, ID = -250µA
VDS > -15V, IDS = -2.4A➃
VDS= -160V, VGS= 0V
VDS =-160V
VGS = 0V, TJ = 125°C
VGS =-20V
VGS =20V
VGS =-10V, ID= -4.0A
VDS =-100V
VDD =-100V, ID = --4.0A,
RG =7.5Ω
Measured from the center of
drain pad to center of source
pad
VGS = 0V, VDS = -25V
f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
IS
Continuous Source Current (Body Diode)
ISM Pulse Source Current (Body Diode) ➀
— — -4.0 A
— — -16
Test Conditions
VSD
trr
QRR
ton
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
— — -5.6 V
Tj = 25°C, IS = -4.0A, VGS = 0V ➃
— — 400 nS Tj = 25°C, IF = -4.0A, di/dt ≤-100A/µs
— — 4.0 µc
VDD ≤ -50V ➃
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
RthJ-PCB
Junction to Case
Junction to PC Board
Min Typ Max Units
—
—
—
—
5.0
19"
"°C"/W
Test Conditions
Soldered to a copper clad PC board
For footnotes refer to the last page
2
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