BCR20AM-12LA-A8 Ver la hoja de datos (PDF) - Renesas Electronics
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BCR20AM-12LA-A8 Datasheet PDF : 7 Pages
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BCR20AM-12LA
Latching Current vs.
Junction Temperature
103
7
5
Distribution
3
2
T2+, G–
102
Typical Example
7
5
3
2
101
7
5
3
2
TT22+–,,
G+
G–
Typical Example
100
–60 –40–20 0 20 40 60 80 100 120 140
Junction Temperature (°C)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage
140
Typical Example
120
Tj = 125°C
100
III Quadrant
80
60
40
I Quadrant
20
0101 2 3 5 7102 2 3 5 7103 2 3 5 7104
Rate of Rise of Off-State Voltage (V/µs)
Gate Trigger Current vs.
Gate Current Pulse Width
103
7
Typical Example
5
3
2 IFGT I
IRGT I
IRGT III
102
7
5
3
2
101100 2 3 5 7 101 2 3 5 7 102
Gate Current Pulse Width (µs)
Breakover Voltage vs.
Junction Temperature
160
Typical Example
140
120
100
80
60
40
20
0
–60 –40–20 0 20 40 60 80 100 120 140
Junction Temperature (°C)
Commutation Characteristics
102
7
5
Typical Example
Tj = 125°C
IT = 4A
3 τ = 500µs
2 VD = 200V
f = 3Hz
Main Voltage
(dv/dt)c
Main Current
IT
τ
Time
VD
(di/dt)c
Time
101
7
5
Minimum
Characteristics
3
Value
III Quadrant
2
100
7
3
I Quadrant
5 7 101 2 3
5 7 102
Rate of Decay of On-State
Commutating Current (A/ms)
Gate Trigger Characteristics Test Circuits
6Ω
6Ω
6V
A
6V
A
V
330Ω
V
330Ω
Test Procedure I
6Ω
Test Procedure II
6V
A
V
330Ω
Test Procedure III
REJ03G0299-0300 Rev.3.00 Nov 30, 2007
Page 5 of 6
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