RF2125PPCBA Ver la hoja de datos (PDF) - RF Micro Devices
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RF2125PPCBA Datasheet PDF : 6 Pages
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2
Typical Applications
• PCS Communication Systems
• Digital Communication Systems
• DECT Cordless Applications
RF2125P
HIGH POWER LINEAR AMPLIFIER
• Commercial and Consumer Systems
• Portable Battery-Powered Equipment
2
Product Description
The RF2125P is a high power, high efficiency linear
amplifier IC. The device is manufactured on an advanced
Gallium Arsenide Heterojunction Bipolar Transistor (HBT)
process and has been designed for use as the final RF
amplifier in digital PCS phone transmitters and base sta-
tions requiring linear amplification operating between
1500MHz and 2200MHz. It will also function as a high
efficiency amplifier for constant envelope applications
such as DECT. The device is packaged in an 8-lead plas-
tic package with a backside ground. The device is self-
contained with the exception of the output matching net-
work and power supply feed line. It produces a typical
output power level of 1W.
3.90
± 0.10
0.43
± 0.05
-A-
0.05
± 0.05
Exposed
Heat Sink
4.90
± 0.10
1.27
2.70
± 0.10
8° MAX
0° MIN
6.00
± 0.20
Dimensions in mm.
0.22
± 0.03
0.60
± 0.15
1.40
± 0.10
1.70
± 0.10
NOTES:
1. Shaded lead is pin 1.
2. Lead coplanarity - 0.10 with respect to datum "A".
Optimum Technology Matching® Applied
Si BJT
üGaAs HBT
GaAs MESFET
Si Bi-CMOS
SiGe HBT
Si CMOS
RF IN 1
8 RF OUT
RF IN 2
7 RF OUT
PC 3
VCC 4
BIAS
CIRCUIT
6 RF OUT
5 RF OUT
PACKAGE BASE
GND
Functional Block Diagram
Package Style: SOIC-8 Slug
Features
• Single 2.7V to 7.5V Supply
• 1W Output Power
• 14dB Gain
• 45% Efficiency
• Power Down Mode
• 1500MHz to 2200MHz Operation
Ordering Information
RF2125P
High Power Linear Amplifier
RF2125P PCBA Fully Assembled Evaluation Board
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Rev A4 010720
2-67
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