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IKW50N60H3

High speed IGBT in Trench and Fieldstop technology

Infineon Technologies 

100

td(off)

tf

td(on)

tr

IKW50N60H3

Highspeedswitchingseriesthirdgeneration

td(off)

tf

td(on)

tr

100

10

10 20 30 40 50 60 70 80 90 100

IC,COLLECTORCURRENT[A]

Figure 9. Typicalswitchingtimesasafunctionof

collectorcurrent

(ind.load,Tj=175°C,VCE=400V,VGE=15/0V,

rG=7Ω,testcircuitinFig.E)

10

0

5

10

15

20

25

rG,GATERESISTOR[Ω]

Figure 10. Typicalswitchingtimesasafunctionofgate

resistor

(ind.load,Tj=175°C,VCE=400V,VGE=15/0V,

IC=50A,testcircuitinFig.E)

100

td(off)

tf

td(on)

tr

6.0

typ.

min.

5.5

max.

5.0

4.5

4.0

3.5

3.0

2.5

10

25

50

75 100 125 150 175

Tj,JUNCTIONTEMPERATURE[°C]

2.0

0

25 50 75 100 125 150 175

Tj,JUNCTIONTEMPERATURE[°C]

Figure 11. Typicalswitchingtimesasafunctionof

junctiontemperature

(ind.load,VCE=400V,VGE=15/0V,IC=50A,

rG=7Ω,testcircuitinFig.E)

Figure 12. Gate-emitterthresholdvoltageasafunction

ofjunctiontemperature

(IC=0,8mA)

9

Rev.2.2,2014-03-12

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