IRF8306MPBF(2011) Ver la hoja de datos (PDF) - International Rectifier

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IRF8306MPBF
(Rev.:2011)

HEXFET Power MOSFET plus Schottky Diode

International Rectifier 

IRF8306MTRPbF

D.U.T

+

Driver Gate Drive

P.W.

Period

D=

P.W.

Period

+

‚

-



RG

ƒ

Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

-

• Low Leakage Inductance

Current Transformer

D.U.T. ISD Waveform

Reverse

-„ +

Recovery

Current

Body Diode Forward

Current

di/dt

D.U.T. VDS Waveform

Diode Recovery

dv/dt

*

• dv/dt controlled by RG

• Driver same type as D.U.T.

VDD

Re-Applied

** + Voltage

Body Diode Forward Drop

• ISD controlled by Duty Factor "D"

-

• D.U.T. - Device Under Test

Inductor Curent

Ripple ≤ 5%

* Use P-Channel Driver for P-Channel Measurements

** Reverse Polarity for P-Channel

*** VGS = 5V for Logic Level Devices

V*G*S*=10V

VDD

ISD

Fig 18. Diode Reverse Recovery Test Circuit for HEXFET® Power MOSFETs

DirectFET™ Board Footprint, MX Outline

(Medium Size Can, X-Designation).

Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.

This includes all recommendations for stencil and substrate designs.

www.irf.com

D

S

G

S

D

G=GATE

D=DRAIN

S=SOURCE

D

D

7

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