IRFP4768PBF Ver la hoja de datos (PDF) - International Rectifier
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IRFP4768PBF Datasheet PDF : 8 Pages
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IRFP4768PbF
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
∆V(BR)DSS/∆TJ
RDS(on)
VGS(th)
IDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
RG
Internal Gate Resistance
250 ––– ––– V VGS = 0V, ID = 250µA
––– 0.20 ––– V/°C Reference to 25°C, ID = 5mAc
––– 14.5 17.5 mΩ VGS = 10V, ID = 56A f
3.0 ––– 5.0 V VDS = VGS, ID = 250µA
––– ––– 20 µA VDS = 250V, VGS = 0V
––– ––– 250
VDS = 250V, VGS = 0V, TJ = 125°C
––– ––– 100 nA VGS = 20V
––– ––– -100
VGS = -20V
––– 0.71 ––– Ω
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
100 ––– –––
Qg
Total Gate Charge
––– 180 270
Qgs
Gate-to-Source Charge
––– 52 –––
Qgd
Gate-to-Drain ("Miller") Charge
––– 72 –––
Qsync
Total Gate Charge Sync. (Qg - Qgd)
––– 108 –––
td(on)
Turn-On Delay Time
––– 36 –––
tr
Rise Time
––– 160 –––
td(off)
Turn-Off Delay Time
––– 57 –––
tf
Fall Time
––– 110 –––
Ciss
Input Capacitance
––– 10880 –––
Coss
Output Capacitance
––– 700 –––
Crss
Reverse Transfer Capacitance
––– 210 –––
Coss eff. (ER) Effective Output Capacitance (Energy Related) h ––– 510 –––
Coss eff. (TR) Effective Output Capacitance (Time Related)g ––– 830 –––
S VDS = 50V, ID = 56A
nC ID = 56A
VDS =125V
VGS = 10V f
ID = 56A, VDS =0V, VGS = 10V
ns VDD = 163V
ID = 56A
RG = 1.0Ω
VGS = 10V f
pF VGS = 0V
VDS = 50V
ƒ = 1.0 MHz, See Fig. 5
VGS = 0V, VDS = 0V to 200V h, See Fig. 11
VGS = 0V, VDS = 0V to 200V g
Diode Characteristics
Symbol
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) c
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
Reverse Recovery Current
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– 93 A MOSFET symbol
D
showing the
––– ––– 370 A integral reverse
G
p-n junction diode.
S
––– ––– 1.3 V TJ = 25°C, IS = 56A, VGS = 0V f
––– 180 ––– ns TJ = 25°C
VR = 200V,
––– 200 –––
TJ = 125°C
––– 1480 ––– nC TJ = 25°C
IF = 56A
di/dt = 100A/µs f
––– 2260 –––
TJ = 125°C
––– 16 ––– A TJ = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.50mH
RG = 25Ω, IAS = 56A, VGS =10V. Part not recommended for use
above this value.
ISD ≤ 56A, di/dt ≤ 950A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
Rθ is measured at TJ approximately 90°C.
RθJC value shown is at time zero.
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