IRFZ44VZLPBF(2004) Ver la hoja de datos (PDF) - International Rectifier
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IRFZ44VZLPBF Datasheet PDF : 13 Pages
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AUTOMOTIVE MOSFET
PD - 95947
IRFZ44VZPbF
IRFZ44VZSPbF
IRFZ44VZLPbF
Features
l Advanced Process Technology
HEXFET® Power MOSFET
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
D
VDSS = 60V
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free
G
Description
Specifically designed for Automotive applications,
this HEXFET® Power MOSFET utilizes the latest
RDS(on) = 12mΩ
ID = 57A
S
processing techniques to achieve extremely low on-
resistance per silicon area. Additional features of
this design are a 175°C junction operating tempera-
ture, fast switching speed and improved repetitive
avalanche rating . These features combine to make
this design an extremely efficient and reliable device
for use in Automotive applications and a wide variety
of other applications.
TO-220AB
D2Pak
TO-262
IRFZ44VZPbF IRFZ44VZSPbF IRFZ44VZLPbF
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
IDM
Pulsed Drain Current
PD @TC = 25°C Power Dissipation
Linear Derating Factor
VGS
Gate-to-Source Voltage
d EAS (Thermally limited) Single Pulse Avalanche Energy
h EAS (Tested ) Single Pulse Avalanche Energy Tested Value
à IAR
Avalanche Current
g EAR
Repetitive Avalanche Energy
TJ
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
i Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
RθJA
Junction-to-Case
i Case-to-Sink, Flat Greased Surface
i Junction-to-Ambient
j Junction-to-Ambient (PCB Mount)
www.irf.com
Max.
57
40
230
92
0.61
± 20
73
110
See Fig.12a, 12b, 15, 16
-55 to + 175
300 (1.6mm from case )
y y 10 lbf in (1.1N m)
Typ.
–––
0.50
–––
–––
Max.
1.64
–––
62
40
Units
A
W
W/°C
V
mJ
A
mJ
°C
Units
°C/W
1
11/16/04
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