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IDT7015S35JI Ver la hoja de datos (PDF) - Integrated Device Technology

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IDT7015S35JI
IDT
Integrated Device Technology IDT
IDT7015S35JI Datasheet PDF : 20 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
IDT7015S/L
High-Speed 8K x 9 Dual-Port Static RAM
Waveform of Read Cycles(5)
ADDR
CE
OE
tRC
tAA(4)
tACE(4)
tAOE (4)
Military, Industrial and Commercial Temperature Ranges
R/W
DATAOUT
tLZ (1)
tOH
VALID DATA(4)
tHZ(2)
BUSYOUT
tBDD(3,4)
2954 drw 07
NOTES:
1. Timing depends on which signal is asserted last, OE or CE.
2. Timing depends on which signal is de-asserted first, CE or OE.
3. tBDD delay is required only in cases where the opposite port is completing a write operation to the same address location. For simultaneous
has no relation to valid output data.
4. Start of valid data depends on which timing becomes effective last tAOE, tACE, tAA or tBDD.
5. SEM = VIH.
read operations BUSY
Timing of Power-Up / Power-Down
CE
tPU
ICC
50%
ISB
tPD
50%
,
2954 drw 08
6.842
APRIL 04, 2006

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