MSK4364 Ver la hoja de datos (PDF) - M.S. Kennedy Corporation
Número de pieza
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Lista de partido
MSK4364 Datasheet PDF : 7 Pages
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ABSOLUTE MAXIMUM RATINGS
V+ High Voltage Supply ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ 55V
VIN Current Command Input ○ ○ ○ ○ ○ ○ ○ ○ ○ ○±13.5V
+Vcc
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○ +16V
-Vcc
IOUT
-18V
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Continuous Output Current ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ 5A
IPK
Peak Output Current ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ 10A
θJC Thermal Resistance @ 25°C
(Junction To Case)
11°C/W
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ELECTRICAL SPECIFICATIONS
TST
Storage Temperature Range
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○-65°C to +150°C
TLD Lead Temperature Range ○ ○ ○ ○ ○ ○ ○ ○ ○ ○+300°C
(10 Seconds)
TC
Case Operating Temperature
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○-55°C to +125°C
TJ Junction Temperature ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ +150°C
All Ratings: Tc=+25°C Unless Otherwise Specified
Parameter
Test Conditions
Group A
Subgroup
45
POWER SUPPLY REQUIREMENTS
+Vcc
@ +15V
1,2,3
-Vcc
@ -15V
1,2,3
PWM
4
Free Running Frequency
5,6
CONTROL
Transconductance 7
±5 Amps Output
4,5,6
Current Monitor 7
±5 Amps Output
4,5,6
Output Offset
4
@ 0 Volts Command
5,6
HALL INPUTS
Low Level Input Voltage 1
-
High Level Input Voltage 1
-
ERROR AMP
Input Voltage Range 1
-
Slew Rate 1
-
Output Voltage Swing 1
-
Gain Bandwidth Product 1
-
Large Signal Voltage Gain 1
-
OUTPUT
Rise Time 1
-
Fall Time 1
-
Leakage Current 1
@ 44V, +150°C Junction
-
Voltage Drop Across Bridge (1 Upper and 1 Lower) 1
@ 5 Amps
-
Voltage Drop Across Bridge (1 Upper and 1 Lower) 1 @ 5 Amps, +150°C Junction
-
Drain-Source On Resistance (Each MOSFET) 6
@ 5 Amps, 150°C Junction
-
Diode VSD 1
@ 5 Amps, Each FET
-
trr 1
IF=5 Amps, di/dt=100A/µS
-
Dead Time 1
-
MSK 4364H/E 3
Min. Typ. Max.
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60
85
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30
40
21
22
23
18.7
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25.3
0.95
0.9
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-
1
1
±5.0
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1.05
1.1
±25.0
±50.0
-
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0.8
3.0
-
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±11 ±12
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6.5
8
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±12 ±13
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6.5
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175
275
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100
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100
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750
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0.6
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1.2
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.100
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1.6
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280
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2
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MSK 4364 2
Min. Typ. Max.
Units
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60
85
mA
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30
40
mA
20
22
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24
KHz
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KHz
0.9
1
1.1 Amp/Volt
0.9
1
1.1 V/Amp
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±5.0 ±35.0 mAmp
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mAmp
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3.0
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0.8
Volts
-
Volts
±11
6.5
±12
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175
±12
8
±13
6.5
275
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Volts
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V/µSec
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Volts
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MHz
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V/mV
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100
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nSec
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100
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nSec
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750 µAmps
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0.6
Volts
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1.2
Volts
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.100
Ω
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1.6
Volts
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280
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nSec
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2
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µSec
NOTES:
1 Guaranteed by design but not tested. Typical parameters are representative of actual device
performance but are for reference only.
2 Industrial grade and 'E' suffix devices shall be tested to subgroups 1 and 4 unless otherwise specified.
3 Military grade devices ("H" Suffix) shall be 100% tested to Subgroups 1, 2, 3 and 4.
4 Subgroups 5 and 6 testing available upon request.
5 Subgroup 1, 4 TA = TC = +25°C
2, 5 TA = TC = +125°C
3, 6 TA = TC = -55°C
6 This is to be used for MOSFET thermal calculation only.
7 Measurements do not include offset current at 0V current command.
2
Rev. A 1/02
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