BU826 Ver la hoja de datos (PDF) - Inchange Semiconductor
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BU826 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
BU826
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 375V(Min)
·High Switching Speed
APPLICATIONS
Designed for line operated switchmode applications such as:
·Switching regulators
·Inverters
·Solenoid and relay drivers
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCES
Collector-Emitter Voltage(VBE= 0)
800
V
VCEO
Collector-Emitter Voltage
375
V
VEBO
Emitter-Base Voltage
8
V
IC
Collector Current-Continuous
6
A
ICM
Collector Current-Peak
8
A
IBB
Base Current
PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
Tstg
Storage Temperature Range
0.5
A
125
W
150
℃
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Thermal Resistance, Junction to Case
1.0 ℃/W
isc Website：www.iscsemi.cn
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