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EFA480C-CP083

Low Distortion GaAs Power FET

Excelics Semiconductor, Inc. 

UPDATED 12/28/2004

EFA480C-CP083

Low Distortion GaAs Power FET

FEATURES

• NON-HERMETIC SURFACE MOUNT

160MIL METAL CERAMIC PACKAGE

• +33.5 dBm OUTPUT POWER AT 1dB COMPRESSION

• 16.0 dB GAIN AT 2 GHz

• 0.5x4800 MICRON RECESSED “MUSHROOM” GATE

• Si3N4 PASSIVATION

• ADVANCED EPITAXIAL HETEROJUNCTION PROFILE

PROVIDES EXTRA HIGH POWER EFFICIENCY, AND HIGH

RELIABILITY

All Dimensions in mil

Tolerance: ± 3 mil

ELECTRICAL CHARACTERISTICS (Ta = 25°C)

Caution! ESD sensitive device.

SYMBOL

PARAMETER/TEST CONDITIONS

MIN TYP MAX UNITS

P1dB

G1dB

PAE

IDSS

Output Power at 1dB Compression

f = 2.0 GHz

Vds = 8 V, Ids=50% Idss

f = 4.0 GHz

Gain at 1dB Compression

f = 2.0 GHz

Vds = 8 V, Ids=50% Idss

f = 4.0 GHz

Power Added Efficiency at 1dB Compression

Vds = 8 V, Ids=50% Idss

f = 2.0 GHz

Saturated Drain Current

VDS = 3 V, VGS = 0 V

32.0 33.5

33.5

14.5 16.0

11.0

35

dBm

dB

%

800 1360 1760 mA

GM

Transconductance

VDS = 3 V, VGS = 0 V

560

720

mS

VP

Pinch-off Voltage

VDS = 3 V, IDS = 10 mA

-2.0

-3.5

V

BVGD

Drain Breakdown Voltage

IGD = 4.8 mA

-12

-15

V

BVGS

Source Breakdown Voltage

RTH*

Thermal Resistance

Notes: * Overall Rth depends on case mounting.

IGS = 4.8 mA

-7

-14

14*

V

oC/W

MAXIMUM RATINGS AT 25OC

SYMBOLS

PARAMETERS

ABSOLUTE1

Vds

Drain-Source Voltage

12V

Vgs

Gate-Source Voltage

-8V

Ids

Drain Current

Idss

Igsf

Forward Gate Current

120mA

Pin

Input Power

Tch

Channel Temperature

Tstg

Storage Temperature

32dBm

175oC

-65/175oC

Pt

Total Power Dissipation

9.7W

Note: 1 Exceeding any of the above ratings may result in permanent damage.

2. Exceeding any of the above ratings may reduce MTTF below design goals.

CONTINUOUS2

8V

-4.0V

1.0A

20mA

@ 3dB Compression

150 oC

-65/150 oC

8.1W

Specifications are subject to change without notice.

Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085

Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com

page 1 of 2

Revised January 2005

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