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CPU165MM Datasheet PDF : 2 Pages
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CPU165MM
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, IC = 250µA
∆V(BR)CES/∆TJ Temp.Coeff. of Breakdown Voltage
— 0.62 — V/°C VGE = 0V, IC = 1.0mA
VCE(on)
Collector-to-Emitter Saturation Voltage — 1.8 2.0
IC = 35A
VGE = 15V
— 2.3 — V IC = 60A
— 2.0 —
IC = 35A, T J = 150°C
VGE(th)
Gate Threshold Voltage
3.0 — 5.5
VCE = VGE, IC = 250µA
∆VGE(th)/∆TJ Temp. Coeff. of Threshold Voltage
— -14 — mV/°C VCE = VGE, IC = 250µA
gfe
Forward Transconductance
11 20 — S VCE = 100V, I C = 35A
ICES
Zero Gate Voltage Collector Current
— — 250 µA VGE = 0V, VCE = 600V
— — 6500
VGE = 0V, VCE = 600V, T J = 150°C
VFM
Diode Forward Voltage Drop
— 1.3 1.7 V IC = 25A
— 1.2 1.5
IC = 25A, T J = 150°C
IGES
Gate-to-Emitter Leakage Current
— — ±500 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
tsc
td(on)
tr
td(off)
tf
Ets
Cies
Coes
Cres
trr
Irr
Qrr
di(rec)M/dt
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
Diode Peak Rate of Fall of Recovery
During tb
— 120 180
IC = 35A
— 25 38
— 40 60
nC VCC = 400V
— 78 —
— 110 —
— 340 510
— 265 400
TJ = 25°C
ns IC = 35A, VCC = 480V
VGE = 15V, R G = 5.0Ω
Energy losses include "tail" and
— 2.1 —
diode reverse recovery.
— 4.0 — mJ
— 6.1 9.5
10 — —
— 80 —
µs VCC = 360V, T J = 125°C
VGE = 15V, R G = 5.0Ω, VCPK < 500V
TJ = 150°C,
— 110 —
— 610 —
ns IC = 35A, VCC = 480V
VGE = 15V, R G = 5.0Ω
— 440 —
Energy losses include "tail" and
— 9.4 — mJ diode reverse recovery.
— 2900 —
— 230 —
VGE = 0V
pF VCC = 30V
— 30 —
ƒ = 1.0MHz
— 50 75 ns TJ = 25°C
— 105 160
— 4.5 10
TJ = 125°C
A TJ = 25°C
IF = 25A
— 8.0 15
— 112 375
TJ = 125°C
nC TJ = 25°C
VR = 200V
— 420 1200
TJ = 125°C
— 250 — A/µs TJ = 25°C
di/dt = 200A/µs
— 160 —
TJ = 125°C
Notes: Repetitive rating; V GE=20V, pulse width
limited by max. junction temperature.
VCC=80%(VCES), VGE=20V, L=10µH,
RG= 5.0Ω.
Refer to Section D for the following: Pulse width ≤ 80µs; duty factor ≤ 0.1%.
Pulse width 5.0µs,
single shot.
Package Outline 4 - IMS-1 Package (10 pins) Section D - page D-13
C-408
To Order
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