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DAN222

SOT-523 Plastic-Encapsulated Diode

Transys Electronics Limited 

Transys

Electronics

LIMITED

SOT-523 Plastic-Encapsulated Diode

DAN222 SWITCHING DIODE

FEATURES:

Power dissipation

PD:

150 mW (Tamb=25℃)

Collector current

IF:

100 mA

Collector-base voltage

VR:

80 V

Operating and storage junction temperature range

TJ, Tstg: -55℃ to +150℃

CIRCUIT:

SOT-523

1

3

2

MARKING: N

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Reverse breakdown voltage

Reverse voltage leakage current

Symbol

Test conditions

MIN

MAX

V(BR)

IR= 100µA

80

IR

VR=70V

0.1

Forward voltage

VF

IF=100mA

1.2

Diode capacitance

Reverse recovery time

CD

VR=6V, f=1MHz

3.5

trr

VR=6V, IF=5mA

4

UNIT

V

µA

V

pF

ns

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