TIP2955 Ver la hoja de datos (PDF) - Inchange Semiconductor

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TIP2955

Silicon PNP Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon PNP Power Transistors

Product Specification

TIP2955

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

VCEO(SUS) Collector-emitter sustaining voltage IC=-30mA ;IB=0

-60

V

VCEsat-1 Collector-emitter saturation voltage IC=-4A ;IB=-0.4A

-1.1

V

VCEsat-2 Collector-emitter saturation voltage IC=-10A ;IB=-3.3A

-3.0

V

VBE

Base-emitter on voltage

IC=-4A ; VCE=-4V

-1.5

V

ICEO

Collector cut-off current

VCE=-30V; IB=0

-0.7 mA

ICER

Collector cut-off current

VCE=-70Vdc;RBE=100Ohm

-1.0 mA

ICEV

Collector cut-off current

VCE=-100Vdc,VBE(off)=-1.5Vdc

-5.0 mA

IEBO

Emitter cut-off current

VEB=-7V; IC=0

固IN电C半H导AN体GE SEMICONDUCTOR hFE-1

DC current gain

IC=-4A ; VCE=-4V

hFE-2

Is/b

DC current gain

IC=-10A ; VCE=-4V

Second breakdown collector current VCE=-30Vdc,t=1.0s,

With base forward biased

Nonrepetitive

-5.0

20

70

5.0

3.0

mA

A

fT

Transition frequency

IC=-0.5A ; VCE=-10V

2.5

MHz

2

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