IKP10N60T(2007) Ver la hoja de datos (PDF) - Infineon Technologies

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IKP10N60T
(Rev.:2007)

Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode

Infineon Technologies 

TrenchStop® Series

IKP10N60T

p

i,v

di /dt

F

I

F

I

rrm

t =t +t

rr S F

Q =Q +Q

rr

S

F

t

rr

t

t

S

F

QQ

S

F

10% I

t

rrm

di /dt V

90% I r r

R

rrm

Figure A. Definition of switching times

Figure C. Definition of diodes

switching characteristics

τ1

r1

Tj (t)

p(t)

r1

τ2

r2

r2

τn

rn

rn

TC

Figure D. Thermal equivalent

circuit

Figure B. Definition of switching losses

Power Semiconductors

12

Figure E. Dynamic test circuit

Leakage inductance Lσ =60nH

a nd Stray capacity C σ =40pF.

Rev. 2.3 Sep. 07

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