IKP10N60T(2007) Ver la hoja de datos (PDF) - Infineon Technologies

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IKP10N60T
(Rev.:2007)

Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode

Infineon Technologies 

TrenchStop® Series

IKP10N60T

p

Switching Characteristic, Inductive Load, at Tj=25 °C

Parameter

Symbol

Conditions

IGBT Characteristic

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Turn-on energy

Turn-off energy

Total switching energy

Anti-Parallel Diode Characteristic

Diode reverse recovery time

Diode reverse recovery charge

Diode peak reverse recovery current

Diode peak rate of fall of reverse

recovery current during t b

td(on)

tr

td(off)

tf

Eon

Eoff

Ets

trr

Qrr

Irrm

dirr/dt

Tj=25°C,

VCC=400V,IC=10A,

VGE=0/15V,

RG=23Ω,

Lσ2)=60nH,

Cσ2)=40pF

Energy losses include

“tail” and diode

reverse recovery.

Tj=25°C,

VR=400V, IF=10A,

diF/dt=880A/μs

min.

-

-

-

-

-

-

-

-

-

-

-

Value

typ.

12

8

215

38

0.16

0.27

0.43

115

0.38

10

680

Unit

max.

- ns

-

-

-

- mJ

-

-

- ns

- µC

-A

- A/μs

Switching Characteristic, Inductive Load, at Tj=175 °C

Parameter

Symbol

Conditions

IGBT Characteristic

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Turn-on energy

Turn-off energy

Total switching energy

Anti-Parallel Diode Characteristic

Diode reverse recovery time

Diode reverse recovery charge

Diode peak reverse recovery current

Diode peak rate of fall of reverse

recovery current during t b

td(on)

tr

td(off)

tf

Eon

Eoff

Ets

trr

Qrr

Irrm

dirr/dt

Tj=175°C,

VCC=400V,IC=10A,

VGE=0/15V,

RG= 23Ω

Lσ1)=60nH,

Cσ1)=40pF

Energy losses include

“tail” and diode

reverse recovery.

Tj=175°C

VR=400V, IF=10A,

diF/dt=880A/μs

min.

-

-

-

-

-

-

-

-

-

-

-

Value

typ.

10

11

233

63

0.26

0.35

0.61

200

0.92

13

390

Unit

max.

- ns

-

-

-

- mJ

-

-

- ns

- µC

-A

- A/μs

2) Leakage inductance L σ a nd Stray capacity C σ due to dynamic test circuit in Figure E.

1) Leakage inductance L σ a nd Stray capacity C σ due to dynamic test circuit in Figure E.

Power Semiconductors

3

Rev. 2.3 Sep. 07

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