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IRG4PC30WPBF

INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier 

IRG4PC30WPbF

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

V(BR)CES

V(BR)ECS

∆V(BR)CES/∆TJ

VCE(ON)

VGE(th)

∆VGE(th)/∆TJ

gfe

ICES

IGES

Parameter

Collector-to-Emitter Breakdown Voltage

Emitter-to-Collector Breakdown Voltage „

Temperature Coeff. of Breakdown Voltage

Collector-to-Emitter Saturation Voltage

Gate Threshold Voltage

Temperature Coeff. of Threshold Voltage

Forward Transconductance …

Zero Gate Voltage Collector Current

Gate-to-Emitter Leakage Current

Min.

600

18

—

—

—

—

3.0

—

11

—

—

—

—

Typ. Max. Units

—— V

—— V

0.34 — V/°C

2.1 2.7

2.45 —

V

1.95 —

— 6.0

-11 — mV/°C

16 — S

— 250 µA

— 2.0

— 1000

— ±100 n A

Conditions

VGE = 0V, IC = 250µA

VGE = 0V, IC = 1.0A

VGE = 0V, IC = 1.0mA

IC = 12A

VGE = 15V

IC = 23A

See Fig.2, 5

IC = 12A , TJ = 150°C

VCE = VGE, IC = 250µA

VCE = VGE, IC = 250µA

VCE = 100 V, IC = 12A

VGE = 0V, VCE = 600V

VGE = 0V, VCE = 10V, TJ = 25°C

VGE = 0V, VCE = 600V, TJ = 150°C

VGE = ±20V

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Qg

Qge

Qgc

td(on)

tr

td(off)

tf

Eon

Eoff

Ets

td(on)

tr

td(off)

tf

Ets

LE

Cies

Coes

Cres

Notes:

Parameter

Total Gate Charge (turn-on)

Gate - Emitter Charge (turn-on)

Gate - Collector Charge (turn-on)

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Turn-On Switching Loss

Turn-Off Switching Loss

Total Switching Loss

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Total Switching Loss

Internal Emitter Inductance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Min. Typ. Max. Units

Conditions

— 51 76

— 7.6 11

IC = 12A

nC VCC = 400V

See Fig.8

— 18 27

VGE = 15V

— 25 —

— 16 — ns TJ = 25°C

— 99 150

IC = 12A, VCC = 480V

— 67 100

VGE = 15V, RG = 23Ω

— 0.13 —

Energy losses include "tail"

— 0.13 — mJ See Fig. 10, 11, 13, 14

— 0.26 0.35

— 24 —

TJ = 150°C,

— 17 —

— 150 —

ns IC = 12A, VCC = 480V

VGE = 15V, RG = 23Ω

— 150 —

Energy losses include "tail"

— 0.55 — mJ See Fig. 13, 14

— 13 — nH Measured 5mm from package

— 980 —

VGE = 0V

— 71 — pF VCC = 30V

See Fig. 7

— 18 —

ƒ = 1.0MHz

 Repetitive rating; VGE = 20V, pulse width limited by

max. junction temperature. ( See fig. 13b )

‚ VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 23Ω,

(See fig. 13a)

ƒ Repetitive rating; pulse width limited by maximum

junction temperature.

„ Pulse width ≤ 80µs; duty factor ≤ 0.1%.

… Pulse width 5.0µs, single shot.

2

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