IRF5Y9540CM
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min
BVDSS
Drain-to-Source Breakdown Voltage -100
∆BVDSS/∆TJ Temperature Coefficient of Breakdown —
Voltage
RDS(on)
Static Drain-to-Source On-State
—
Resistance
VGS(th)
Gate Threshold Voltage
-2.0
gfs
Forward Transconductance
5.3
IDSS
Zero Gate Voltage Drain Current
—
—
IGSS
Gate-to-Source Leakage Forward
—
IGSS
Gate-to-Source Leakage Reverse
—
Qg
Total Gate Charge
—
Qgs
Gate-to-Source Charge
—
Qgd
Gate-to-Drain (‘Miller’) Charge
—
td(on)
Turn-On Delay Time
—
tr
Rise Time
—
td(off)
Turn-Off Delay Time
—
tf
Fall Time
—
LS + LD
Total Inductance
—
Ciss
Input Capacitance
—
Coss
Output Capacitance
—
Crss
Reverse Transfer Capacitance
—
Typ Max Units
—— V
-0.11 — V/°C
Test Conditions
VGS = 0V, ID = -250µA
Reference to 25°C, ID = -1.0mA
— 0.117 Ω
VGS = 10V, ID = -11A ➃
— -4.0
——
— -25
— -250
— -100
— 100
— 109
— 19
— 53
— 29
— 135
— 87
— 84
6.8 —
1390 —
428 —
246 —
V
S( )
µA
nA
nC
ns
VDS = VGS, ID = -250µA
VDS = -50V, IDS = -11A ➃
VDS = -100V ,VGS=0V
VDS = -80V,
VGS = 0V, TJ =125°C
VGS = -20V
VGS = 20V
VGS =-10V, ID = -11A
VDS = -80V
VDD = -50V, ID = -11A,
RG = 7.5Ω
nH Measured from drain lead (6mm/
0.25in. from package) to source
lead (6mm/0.25in. from package)
VGS = 0V, VDS = -25V
pF
f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
IS
Continuous Source Current (Body Diode) — — -18 A
ISM Pulse Source Current (Body Diode) ➀
— — -72
VSD Diode Forward Voltage
— — -1.6 V
trr Reverse Recovery Time
— — 220 ns
QRR Reverse Recovery Charge
— — 1200 nC
Tj = 25°C, IS = -11A, VGS = 0V ➃
Tj = 25°C, IF = -11A, di/dt ≥ 100A/µs
VDD ≤ -50V ➃
ton Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
Junction-to-Case
Min Typ Max Units
— — 1.67 °C/W
Test Conditions
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
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