IRF5N3205(2002) Ver la hoja de datos (PDF) - International Rectifier

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IRF5N3205
(Rev.:2002)

HEXFET® POWER MOSFET SURFACE MOUNT (SMD-1)

International Rectifier 

IRF5N3205

8000

6000

 VGS = 0V, f = 1MHz

Ciss = Cgs + Cgd , Cds SHORTED

Crss = Cgd

Coss = Cds + Cgd

 Ciss

4000

2000

0

1

C oss

C rss

10

100

VDS , Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

20  ID = 55A

16

12

 VDS = 44V

VDS = 27V

VDS = 11V

8

4

 FOR TEST CIRCUIT

SEE FIGURE 13

0

0

40

80

120

160

200

QG , Total Gate Charge (nC)

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

1000

100

 TJ = 150° C

10

 TJ = 25 ° C

1

0.1

0.4

 VGS = 0 V

0.8

1.2

1.6

VSD ,Source-to-Drain Voltage (V)

Fig 7. Typical Source-Drain Diode

Forward Voltage

4

1000

OPERATION IN THIS AREA

LIMITED BY R DS(on)

100

100µs

1ms

10

Tc = 25°C

Tj = 150°C

Single Pulse

1

1

10

10ms

100

VDS , Drain-toSource Voltage (V)

Fig 8. Maximum Safe Operating Area

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