IRF5N3415 Ver la hoja de datos (PDF) - International Rectifier

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IRF5N3415

HEXFET® POWER MOSFET SURFACE MOUNT (SMD-1)

International Rectifier 

IRF5N3415

6000

5000

4000

3000

 VGS = 0V, f = 1MHz

Ciss = Cgs + Cgd , Cds SHORTED

Crss = Cgd

Coss = Cds + Cgd

 Ciss

2000

C oss

1000

C rss

0

1

10

100

VDS , Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

20  ID = 22A

16

12

 VDS = 120V

VDS = 75V

VDS = 30V

8

4

 FOR TEST CIRCUIT

SEE FIGURE 13

0

0

40

80

120

160

200

QG , Total Gate Charge (nC)

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

1000

100

 TJ = 150° C

10

 TJ = 25° C

1

0.1

0.2

 VGS = 0 V

0.6

1.0

1.4

VSD ,Source-to-Drain Voltage (V)

Fig 7. Typical Source-Drain Diode

Forward Voltage

4

1000

100

OPERATION IN THIS AREA

LIMITED BY RDS(on)

10

Tc = 25°C

Tj = 150°C

Single Pulse

1

1

10

1ms

10ms

100

1000

VDS , Drain-toSource Voltage (V)

Fig 8. Maximum Safe Operating Area

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