Electrical Characteristics: (TJ = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Drain–to–Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain–to–Source On–Resistance
Gate Threshold Voltage
V(BR)DSS
∆V(BR)DSS
∆TJ
RDS(on)
VGS(th)
VGS = 0V, ID = 250µA
Reference to +25°C, ID = 1mA
VGS = 10V, ID = 18A, Note 4
VDS = VGS, ID = 250µA
200 –
–
V
– 0.27 – V/°C
– – 0.085 Ω
2.0 – 4.0 V
Forward Transconductance
Drain–to–Source Leakage Current
Gate–to–Source Forward Leakage
Gate–to–Source Reverse Leakage
gfs
VDS = 50V, ID = 18A, Note 4
12 – – mhos
IDSS VDS = 200V, VGS = 0V
– – 25 µA
VDS = 160V, VGS = 0V, TJ = +125°C – – 250 µA
IGSS VGS = 20V
– – 100 nA
IGSS VGS = –20V
– – –100 nA
Total Gate Charge
Gate–to–Source Charge
Gate–to–Drain (“Miller”) Charge
Turn–On Delay Time
Rise Time
Qg
ID = 30A, VDS = 160V, VGS = 10V, –
– 140 nC
Qgs
Note 4
– – 28 nC
Qgd
– – 74 nC
td(on) VDD = 100V, ID = 30A, RG = 6.2Ω, – 16
–
ns
tr
RD = 3.2Ω, Note 4
– 86 – ns
Turn–Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
td(off)
– 70 – ns
tf
– 62 – ns
LD
Between lead, .250in. (6.0) mm from – 5.0 – nH
LS
package and center of die contact
– 13.0 –
nH
Input Capacitance
Output Capacitance
Reverse Transfer Capaticance
Ciss
Coss
Crss
VGS = 0V, VDS = 25V, f = 1MHz
– 2800 – pF
– 780 – pF
– 250 – pF
Source–Drain Ratings and Characteristics:
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Diode Forward Voltage
IS
ISM Note 1
VSD TJ = +25°C, IS = 30A, VGS = 0V,
Note 4
– – 30 A
– – 120 A
– – 2.0 V
Reverse Recovery Time
Reverse Recovery Charge
trr TJ = +25°C, IF = 30A,
Qrr di/dt = 100A/µs, Note 4
– 360 540 ns
– 4.6 6.9 µC
Forward Turn–On Time
ton Intrinsic turn–on time is neglegible (turn–on is dominated by LS+LD)
Note 1. Repetitive rating; pulse width limited by maximum junction temperature.
Note 4. Pulse width ≤ 300µs; duty cycle ≤ 2%.