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NTE324

Silicon Complementary Transistors General Purpose

NTE Electronics 

Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

Base–Emitter Voltage

DC Current Gain

Transition Frequency

Collector–Base Capacitance

Small–Signal Current Gain

VBE

hFE

fT

Ccbo

hfe

VCE = 2V, IC = 250mA

VCE = 2V, IC = 250mA, Note 1

VCE = 2V, IC = 1A, Note 1

VCE = 10V, IC = 100mA, f = 10MHz

VCB = 20V, IE = 0, f = 1MHz

VCE = 1.5V, IC = 200mA, f = 1kHz

–

– 1.0 V

40 – 150 –

5

–

–

–

30 –

– MHz

–

– 50 pF

40 –

–

–

Note 1. Pulse Duration = 300µs, Duty Cycle ≤ 2%.

.260

(6.6)

Max

.370 (9.39) Dia Max

.355 (9.03) Dia Max

.500

(12.7)

Min

Emitter

.018 (0.45)

Base

Collector/Case

45°

.031 (.793)

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