IRF7204PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(ON)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD
Internal Drain Inductance
LS
Internal Source Inductance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
-20 V VGS = 0V, ID = -250µA
-0.022 V/°C Reference to 25°C, ID = -1mA
0.060 Ω
0.10
VGS = -10V, ID = -5.3A
VGS = -4.5V, ID = -2.0A
-1.0 -2.5 V VDS = VGS, ID = -250µA
7.9 S VDS = -15V, ID = -5.3A
-25 µA VDS = -16V, VGS = 0V
-250
VDS = -16V, VGS = 0V, TJ = 125 °C
-100 nA VGS = -12V
100
VGS = 12V
25
ID = -5.3A
5.0 nC VDS = -10V
8.0
VGS = -10V
14 30
VDD = -10V
26 60 ns ID = -1.0A
100 150
RG = 6.0Ω
68 100
RD = 10Ω
D
2.5
nH Between lead,6mm(0.25in.)
from package and center G
4.0
of die contact
S
860
VGS = 0V
750 pF VDS = -10V
230
= 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
-2.5
-15
-1.2
85 100
77 120
MOSFET symbol
D
showing the
A
integral reverse
G
p-n junction diode.
S
V TJ = 25°C, IS = -1.25A, VGS = 0V
ns TJ = 25°C, IF = -2.4A
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
ISD ≤ -5.3A, di/dt ≤ 90A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Surface mounted on FR-4 board, t ≤ 10sec.