IRG4BC10SD Ver la hoja de datos (PDF) - International Rectifier

Número de pieza

componentes Descripción

Lista de partido

IRG4BC10SD

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

International Rectifier 

IRG4BC10SD

Same type

device as

D.U.T.

80%

of Vce

430µF

D.U.T.

Vge

VC

90%

10%

90%

td(off)

Fig. 18a - Test Circuit for Measurement of

ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf

IC 5%10%

t d(on)

tr

tf

Eon

Eoff

Ets= (Eon +Eoff )

t=5µs

Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining

Eoff, td(off), tf

10% +Vg

GATE VOLTAGE D.U.T.

+Vg

Vce

10% Ic

Vcc

90% Ic

td(on)

5% Vce

tr

t1

DUT VOLTAGE

AND CURRENT

Ipk

Ic

∫ t2

Eon = VVcceeieIcdtdt

t1

t2

Fig. 18c - Test Waveforms for Circuit of Fig. 18a,

Defining Eon, td(on), tr

8

trr

Ic

tx

10% Vcc

Vpk

Irr

trr

∫ Qrr = iIdcddt t

tx

10% Irr

Vcc

DIODE RECOVERY

WAVEFORMS

DIODE REVERSE

RECOVERY ENERGY

t3

∫ t4

Erec = VVddidIcdtdt

t3

t4

Fig. 18d - Test Waveforms for Circuit of Fig. 18a,

Defining Erec, trr, Qrr, Irr

www.irf.com

Share Link: